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FZ1200R17HP4B2BOSA1

FZ1200R17HP4B2BOSA1

FZ1200R17HP4B2BOSA1

Infineon Technologies AG

FZ1200R17HP4B2BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies AG stock available on our website

SOT-23

FZ1200R17HP4B2BOSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
ECCN (US) EAR99
Maximum Collector-Emitter Voltage (V) 1700
Typical Collector Emitter Saturation Voltage (V) 1.9
Maximum Gate Emitter Voltage (V) ±20
Maximum Power Dissipation (mW) 8600000
Maximum Continuous Collector Current (A) 1200
Maximum Gate Emitter Leakage Current (uA) 0.4
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 150
Military No
Mounting Screw
Package Length 140
Package Width 130
PCB changed 7
PackagingTray
Part StatusUnconfirmed
Technology Trench
Pin Count7
Configuration Dual
Channel Type N
RoHS StatusYes with exemptions
In-Stock:1121 items

About FZ1200R17HP4B2BOSA1

The FZ1200R17HP4B2BOSA1 from Infineon Technologies AG is a high-performance microcontroller designed for a wide range of embedded applications. This component features FZ1200R17HP4B2BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies AG stock available on our website.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the FZ1200R17HP4B2BOSA1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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