Welcome to Hotenda.com Online Store!

logo
userjoin
Home

FS150R12KE3

FS150R12KE3

FS150R12KE3

Infineon Technologies AG

FS150R12KE3 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies AG stock available on our website

SOT-23

FS150R12KE3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Surface MountNO
Number of Terminals 35
Transistor Element Material SILICON
Pbfree Code icon-pbfree no
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Terminal Position UPPER
Terminal FormUNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count35
JESD-30 Code R-XUFM-X35
Qualification StatusNot Qualified
Operating Temperature (Max) 150°C
Number of Elements 6
Configuration BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Case Connection ISOLATED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 700W
Turn On Time340 ns
Collector Current-Max (IC) 200A
Turn Off Time-Nom (toff) 610 ns
Collector-Emitter Voltage-Max 1200V
Gate-Emitter Voltage-Max 20V
VCEsat-Max 2.2 V
RoHS StatusRoHS Compliant
In-Stock:2767 items

FS150R12KE3 Product Details

FS150R12KE3 Description


FS150R12KE3 is an IGBT Module transistor from the manufacturer of Infineon Technologies AG with a voltage of 1200V. The operating temperature of FS150R12KE3 is 150°C and its maximum power dissipation is 700W. FS150R12KE3 has 35 pins and it is available in Tape&Reel packaging way. The Turn On-Time of FS150R12KE3 is 340 ns and the Turn Off Time-Nom (toff) is 610 ns.



FS150R12KE3 Features


  • Collector Current-Max (IC): 200A

  • Collector-Emitter Voltage-Max: 1200V

  • VCEsat-Max: 2.2 V

  • Gate-Emitter Voltage-Max: 20V



FS150R12KE3 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


Get Subscriber

Enter Your Email Address, Get the Latest News