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DF160R12W2H3F_B11

DF160R12W2H3F_B11

DF160R12W2H3F_B11

Infineon Technologies AG

DF160R12W2H3F_B11 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies AG stock available on our website

SOT-23

DF160R12W2H3F_B11 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
ECCN (US) EAR99
Typical Collector Emitter Saturation Voltage (V) 1.55
Maximum Collector-Emitter Voltage (V) 1200
Maximum Power Dissipation (mW) 190000
Maximum Gate Emitter Voltage (V) ±20
Maximum Continuous Collector Current (A) 20
Maximum Gate Emitter Leakage Current (uA) 0.1
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 150
AEC Qualified No
Supplier Package EASY2B-2
Military No
Mounting Screw
Package Height 12
Package Length 62.8
Package Width 56.7
PCB changed 25
PackagingTray
Part StatusActive
Pin Count25
Configuration Quad
Channel Type N
RoHS StatusYes with exemptions
In-Stock:4887 items

About DF160R12W2H3F_B11

The DF160R12W2H3F_B11 from Infineon Technologies AG is a high-performance microcontroller designed for a wide range of embedded applications. This component features DF160R12W2H3F_B11 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies AG stock available on our website.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the DF160R12W2H3F_B11, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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