BSC072N03LD G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies AG stock available on our website
SOT-23
BSC072N03LD G Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Surface Mount
YES
Number of Terminals
6
Transistor Element Material
SILICON
JESD-609 Code
e3
Pbfree Code
icon-pbfree yes
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Subcategory
FET General Purpose Power
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
not_compliant
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
8
JESD-30 Code
R-PDSO-F6
Qualification Status
Not Qualified
Operating Temperature (Max)
150°C
Number of Elements
2
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Transistor Application
SWITCHING
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (Abs) (ID)
20A
Drain-source On Resistance-Max
0.0094Ohm
Pulsed Drain Current-Max (IDM)
80A
DS Breakdown Voltage-Min
30V
Avalanche Energy Rating (Eas)
90 mJ
FET Technology
METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs)
57W
RoHS Status
RoHS Compliant
In-Stock:1749 items
BSC072N03LD G Product Details
BSC072N03LD G Description
The Infineon Technologies BSC072N03LD G is an N-Channel Power MOSFET making OptiMOS? 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications.
BSC072N03LD G Features
Ultra-low gate and output charge
Lowest on-state resistance in small footprint packages
Easy to design in
BSC072N03LD G Applications
Onboard charger
Notebook
Mainboard
DC-DC
VRD/VRM
Motor control
LED
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