BSB044N08NN3 G Description
The BSB044N08NN3 G is an N-channel Power MOSFET with performance-leading benchmark OptiMOS? technology. It is the market leader in highly efficient solutions for power generation, power supply, and power consumption applications. The operating and storage temperature is between -40 and +150??. The Infineon BSB044N08NN3 G is in the WDSON-2-3 package with 78w.
BSB044N08NN3 G Feature
Optimized technology for DC-to-DC converters
Excellent gate charge x RDS (ON) product (FOM)
Superior thermal resistance
Dual-sided cooling
Low parasitic inductance
Low profile
Normal level
100% avalanche tested
Qualified according to JEDEC for target applications
BSB044N08NN3 G Applications
