Name: SPW47N60C3FKSA1
Brand: Infineon Technologies
SKU: SPW47N60C3FKSA1
Price: 20.15000 USD
Availability: InStock

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SPW47N60C3FKSA1

Manufacturer part number:SPW47N60C3FKSA1

Manufacturer:Infineon Technologies

Description:SPW47N60C3FKSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:SPW47N60C3FKSA1 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mounting Type	Through Hole
Package / Case	TO-247-3
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2005
Series	CoolMOS™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin (Sn)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	415W Tc
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	70m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	3.9V @ 2.7mA
Input Capacitance (Ciss) (Max) @ Vds	6800pF @ 25V
Current - Continuous Drain (Id) @ 25°C	47A Tc
Gate Charge (Qg) (Max) @ Vgs	320nC @ 10V
Drain to Source Voltage (Vdss)	650V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
JEDEC-95 Code	TO-247AC
Drain Current-Max (Abs) (ID)	47A
Drain-source On Resistance-Max	0.07Ohm
Pulsed Drain Current-Max (IDM)	141A
DS Breakdown Voltage-Min	600V
Avalanche Energy Rating (Eas)	1800 mJ
RoHS Status	ROHS3 Compliant

SPW47N60C3FKSA1 Product Details

SPW47N60C3FKSA1 Description

The SPW47N60C3FKSA1 is a 650V N-channel CoolMOS? Power MOSFET with low specific on-state resistance. The CoolMOS? MOSFET SPW47N60C3FKSA1 offers a significant reduction of conduction, switching, and driving losses and enables high power density and efficiency for superior power conversion systems. The latest state-of-the-art generation of high voltage power MOSFETs makes AC-DC power supplies more efficient, more compact, lighter, and cooler than ever before.