Name: SPW20N60S5FKSA1
Brand: Infineon Technologies
SKU: SPW20N60S5FKSA1
Availability: InStock

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SPW20N60S5FKSA1

Manufacturer part number:SPW20N60S5FKSA1

Manufacturer:Infineon Technologies

Description:SPW20N60S5FKSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:SPW20N60S5FKSA1 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-247-3
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
Series	CoolMOS™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin (Sn)
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	208W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	190m Ω @ 13A, 10V
Vgs(th) (Max) @ Id	5.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	3000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	20A Tc
Gate Charge (Qg) (Max) @ Vgs	103nC @ 10V
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	20A
Drain-source On Resistance-Max	0.19Ohm
Pulsed Drain Current-Max (IDM)	40A
DS Breakdown Voltage-Min	600V
Avalanche Energy Rating (Eas)	690 mJ
RoHS Status	RoHS Compliant

SPW20N60S5FKSA1 Product Details

SPW20N60S5FKSA1 Description

The SPW20N60S5FKSA1 from Infineon Technologies is a 600V N-channel CoolMOS? Power MOSFET with revolutionary high-voltage technology. CoolMOS? MOSFETs significantly reduce conduction, switching, and driving losses, allowing for great power density and efficiency in superior power conversion systems.