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SPP17N80C3XKSA1

SPP17N80C3XKSA1

SPP17N80C3XKSA1

Infineon Technologies

SPP17N80C3XKSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

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SPP17N80C3XKSA1 Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 18 Weeks
Mounting Type Through Hole
Package / Case TO-220-3
Surface MountNO
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2005
Series CoolMOS™
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Additional FeatureAVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count3
JESD-30 Code R-PSFM-T3
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 208W Tc
Operating ModeENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 290m Ω @ 11A, 10V
Vgs(th) (Max) @ Id 3.9V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2320pF @ 25V
Current - Continuous Drain (Id) @ 25°C 17A Tc
Gate Charge (Qg) (Max) @ Vgs 177nC @ 10V
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 17A
Drain-source On Resistance-Max 0.29Ohm
Pulsed Drain Current-Max (IDM) 51A
DS Breakdown Voltage-Min 800V
Avalanche Energy Rating (Eas) 670 mJ
RoHS StatusROHS3 Compliant
In-Stock:1353 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$5.29000$5.29
10$4.75500$47.55
100$3.95430$395.43
500$3.26046$1630.23

SPP17N80C3XKSA1 Product Details

SPP17N80C3XKSA1 Description


SPP17N80C3XKSA1 belongs to the family of Cool MOS? power transistors manufactured by Infineon Technologies based on the new revolutionary high voltage technology for ultra-low gate charge, improved transconductance, and ultralow effective capacitances. It is embedded in the PG-TO-220-3-31 package for space-saving.



SPP17N80C3XKSA1 Features


  • Ultralow gate charge

  • High dv/dt capability

  • Improved transconductance

  • Ultralow effective capacitances

  • Available in the PG-TO-220-3-31 package



SPP17N80C3XKSA1 Applications


  • Solar

  • Adapter

  • Lighting

  • PC power

  • Consumer


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