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SPP08P06PBKSA1

SPP08P06PBKSA1

SPP08P06PBKSA1

Infineon Technologies

Trans MOSFET P-CH 60V 8.8A 3-Pin(3+Tab) TO-220AB

SOT-23

SPP08P06PBKSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package PG-TO220-3
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 1999
Series SIPMOS®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 42W Tc
FET Type P-Channel
Rds On (Max) @ Id, Vgs 300mOhm @ 6.2A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 420pF @ 25V
Current - Continuous Drain (Id) @ 25°C 8.8A Tc
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
In-Stock:3087 items

About SPP08P06PBKSA1

The SPP08P06PBKSA1 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features Trans MOSFET P-CH 60V 8.8A 3-Pin(3+Tab) TO-220AB.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SPP08P06PBKSA1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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