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SPP07N60S5

SPP07N60S5

SPP07N60S5

Infineon Technologies

SPP07N60S5 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

SPP07N60S5 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2004
Series CoolMOS™
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional FeatureAVALANCHE RATED
Subcategory FET General Purpose Power
Voltage - Rated DC 650V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating7.3A
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count3
Qualification StatusNot Qualified
Number of Elements 1
Power Dissipation-Max 83W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation83W
Case Connection DRAIN
Turn On Delay Time120 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 600m Ω @ 4.6A, 10V
Vgs(th) (Max) @ Id 5.5V @ 350μA
Halogen Free Not Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 970pF @ 25V
Current - Continuous Drain (Id) @ 25°C 7.3A Tc
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Rise Time40ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 170 ns
Continuous Drain Current (ID) 7.3A
Threshold Voltage 4.5V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage600V
Drain-source On Resistance-Max 0.6Ohm
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 14.6A
Height 9.45mm
Length 10.36mm
Width 4.57mm
REACH SVHC No SVHC
RoHS StatusRoHS Compliant
Lead Free Contains Lead
In-Stock:2643 items

SPP07N60S5 Product Details

SPP07N60S5 Description


The Infineon Technologies SPP07N60S5 is a Cool MOS? Power Transistor using new revolutionary high voltage technology.



SPP07N60S5 Features


  • Worldwide best RDS(on) in TO-220

  • Ultra-low gate charge

  • Periodic avalanche rated

  • Extreme dv/dt rated

  • Ultra-low effective capacitances

  • Improved transconductance



SPP07N60S5 Applications


  • Automotive


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