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SPD07N60C3

SPD07N60C3

SPD07N60C3

Infineon Technologies

SPD07N60C3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

SPD07N60C3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 10 Weeks
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface MountYES
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2003
Series CoolMOS™
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Additional FeatureAVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count3
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 83W Tc
Operating ModeENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 600m Ω @ 4.6A, 10V
Vgs(th) (Max) @ Id 3.9V @ 350μA
Input Capacitance (Ciss) (Max) @ Vds 790pF @ 25V
Current - Continuous Drain (Id) @ 25°C 7.3A Tc
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-252AA
Drain Current-Max (Abs) (ID) 7.3A
Drain-source On Resistance-Max 0.6Ohm
Pulsed Drain Current-Max (IDM) 21.9A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 230 mJ
RoHS StatusRoHS Compliant
In-Stock:3093 items

SPD07N60C3 Product Details

SPD07N60C3 Description


SPD07N60C3 is a 650v Cool MOS? Power Transistor. The Infineon SPD07N60C3 can be applied in Server, Telecom, Consumer, PC power, and Adapter applications. The Operating and Storage Temperature Range is between -55 and 150??. And the MOSFET SPD07N60C3 is in the TO-252-3 package with 83W power dissipation.



SPD07N60C3 Features


  • Low specific on-state resistance (RDS(on)*A)

  • Very low energy storage in output capacitance (Eoss) @400V

  • Low gate charge (Qg)

  • Fieldproven CoolMOS? quality

  • New revolutionary high voltage technology

  • Periodic avalanche rated



SPD07N60C3 Applications


  • Server

  • Telecom

  • Consumer

  • PC power

  • Adapter


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