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SPB35N10 G

SPB35N10 G

SPB35N10 G

Infineon Technologies

MOSFET N-CH 100V 35A D2PAK

SOT-23

SPB35N10 G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2002
Series SIPMOS®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 150W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 44m Ω @ 26.4A, 10V
Vgs(th) (Max) @ Id 4V @ 83μA
Input Capacitance (Ciss) (Max) @ Vds 1570pF @ 25V
Current - Continuous Drain (Id) @ 25°C 35A Tc
Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
In-Stock:2553 items

About SPB35N10 G

The SPB35N10 G from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 100V 35A D2PAK.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SPB35N10 G, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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