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ISP25DP06LMSATMA1

ISP25DP06LMSATMA1

ISP25DP06LMSATMA1

Infineon Technologies

MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 250m Ω @ 1.9A, 10V ±20V 420pF @ 30V 13.9nC @ 10V 60V TO-261-3

SOT-23

ISP25DP06LMSATMA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-261-3
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Series OptiMOS™
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 1.8W Ta 5W Tc
FET Type P-Channel
Rds On (Max) @ Id, Vgs 250m Ω @ 1.9A, 10V
Vgs(th) (Max) @ Id 2V @ 270μA
Input Capacitance (Ciss) (Max) @ Vds 420pF @ 30V
Current - Continuous Drain (Id) @ 25°C 1.9A Ta
Gate Charge (Qg) (Max) @ Vgs 13.9nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
RoHS StatusROHS3 Compliant
In-Stock:19042 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.38000$0.38
500$0.3762$188.1
1000$0.3724$372.4
1500$0.3686$552.9
2000$0.3648$729.6
2500$0.361$902.5

ISP25DP06LMSATMA1 Product Details

ISP25DP06LMSATMA1 Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 420pF @ 30V maximal input capacitance.To operate this transistor, you will need a 60V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

ISP25DP06LMSATMA1 Features


a 60V drain to source voltage (Vdss)


ISP25DP06LMSATMA1 Applications


There are a lot of Infineon Technologies
ISP25DP06LMSATMA1 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies

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