IRLR7807ZPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRLR7807ZPBF Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2003
Series
HEXFET®
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
40W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
13.8m Ω @ 15A, 10V
Vgs(th) (Max) @ Id
2.25V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
780pF @ 15V
Current - Continuous Drain (Id) @ 25°C
43A Tc
Gate Charge (Qg) (Max) @ Vgs
11nC @ 4.5V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
RoHS Status
ROHS3 Compliant
In-Stock:1120 items
IRLR7807ZPBF Product Details
IRLR7807ZPBF Description
IRLR7807ZPBF is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a drain to source voltage of 30V. The operating temperature of the IRLR7807ZPBF is -55°C~175°C TJ and its maximum power dissipation is 40W Tc. IRLR7807ZPBF has 2 pins and it is available in Tube packaging way.
IRLR7807ZPBF Features
Very Low RDS(on) at 4.5V VGS
Ultra-Low Gate Impedance
Fully Characterized Avalanche Voltage and Current
IRLR7807ZPBF Applications
High Frequency Synchronous Buck
Converters for Computer Processor Power
Lead-Free
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