Name: IRLR014NPBF
Brand: Infineon Technologies
SKU: IRLR014NPBF
Availability: InStock

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IRLR014NPBF

Manufacturer part number:IRLR014NPBF

Manufacturer:Infineon Technologies

Description:IRLR014NPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRLR014NPBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	4
Supplier Device Package	D-Pak
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2004
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	140mOhm
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Voltage - Rated DC	55V
Technology	MOSFET (Metal Oxide)
Current Rating	10A
Number of Elements	1
Power Dissipation-Max	28W Tc
Element Configuration	Single
Power Dissipation	28W
Turn On Delay Time	6.5 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	140mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	265pF @ 25V
Current - Continuous Drain (Id) @ 25°C	10A Tc
Gate Charge (Qg) (Max) @ Vgs	7.9nC @ 5V
Rise Time	47ns
Drain to Source Voltage (Vdss)	55V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Fall Time (Typ)	23 ns
Turn-Off Delay Time	12 ns
Continuous Drain Current (ID)	10A
Threshold Voltage	1V
Gate to Source Voltage (Vgs)	16V
Drain to Source Breakdown Voltage	55V
Dual Supply Voltage	55V
Input Capacitance	265pF
Drain to Source Resistance	140mOhm
Rds On Max	140 mΩ
Nominal Vgs	1 V
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free

IRLR014NPBF Product Details

IRLR014NPBF Description

IRLR014NPBF is a 55v HEXFET? Power MOSFET. The Fifth Generation HEXFET IRLR014NPBF from International Rectifier utilizes advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.