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IRLML5103TR

IRLML5103TR

IRLML5103TR

Infineon Technologies

IRLML5103TR datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRLML5103TR Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface MountYES
Transistor Element Material SILICON
PackagingCut Tape (CT)
Published 2003
Series HEXFET®
JESD-609 Code e3
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional FeatureLOGIC LEVEL COMPATIBLE
HTS Code8541.21.00.95
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-G3
Qualification StatusNot Qualified
Operating Temperature (Max) 150°C
Operating Temperature (Min) -55°C
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating ModeENHANCEMENT MODE
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 600m Ω @ 600mA, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 75pF @ 25V
Current - Continuous Drain (Id) @ 25°C 760mA Ta
Gate Charge (Qg) (Max) @ Vgs 5.1nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drain Current-Max (Abs) (ID) 0.76A
Drain-source On Resistance-Max 0.6Ohm
DS Breakdown Voltage-Min 30V
Power Dissipation-Max (Abs) 0.28W
RoHS StatusNon-RoHS Compliant
In-Stock:4848 items

IRLML5103TR Product Details

IRLML5103TR Description


International Rectifier's Fifth Generation HEXFETs use innovative processing techniques to provide ultra-low on-resistance per silicon area. This benefit, when paired with the quick switching speed and ruggedized device architecture that HEXFET Power MOSFETs are known for, gives the designer an exceptionally efficient and dependable device that can be used in a wide range of applications. To build a HEXFET Power MOSFET with the industry's smallest footprint, a bespoke leadframe has been put into the conventional SOT-23 packaging. The Micro3 package is designed for situations where printed circuit board space is limited. The Micro3's tiny profile (1.1mm) allows it to readily fit into ultra-thin application contexts like portable devices and PCMCIA cards.



IRLML5103TR Features


  • Advanced process technology

  • Dynamic dv/dt rating

  • Fast switching

  • Fully avalanche rated



IRLML5103TR Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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