IRLML2502TR Description
International Rectifier's N-Channel MOSFETs use innovative processing techniques to achieve extraordinarily low on-resistance per silicon area. This benefit, when paired with the high switching speed and ruggedized device design of HEXFET Power MOSFETs, gives the designer an exceptionally efficient and reliable device for battery and load control.
IRLML2502TR Features
IRLML2502TR Applications
Power Management
Consumer Electronics
Portable Devices
Industrial