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IRLL2703

IRLL2703

IRLL2703

Infineon Technologies

IRLL2703 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRLL2703 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface MountYES
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 1999
Series HEXFET®
JESD-609 Code e0
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 245
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-G4
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1W Ta
Operating ModeENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 45m Ω @ 3.9A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 530pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3.9A Ta
Gate Charge (Qg) (Max) @ Vgs 14nC @ 5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±16V
Drain Current-Max (Abs) (ID) 5.5A
Drain-source On Resistance-Max 0.045Ohm
Pulsed Drain Current-Max (IDM) 16A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 180 mJ
RoHS StatusNon-RoHS Compliant
In-Stock:4590 items

IRLL2703 Product Details

IRLL2703 Description


International Rectifier's Fifth Generation HEXFETs use cutting-edge processing methods to provide exceptionally low on-resistance per silicon area. This feature offers the designer a highly effective and dependable device for usage in a range of applications, in addition to the quick switching speed and ruggedized device architecture that HEXFET Power MOSFETs are widely known for. The SOT-223 package is made to be surface-mounted utilizing infrared, vapor phase, or wave soldering processes. In addition to having the same simple automatic pick-and-place functionality as regular SOT or SOIC packages, this package's special design offers increased thermal performance thanks to a larger tab for heatsinking. In a typical surface mount application, power dissipation of 1.0W is attainable.



IRLL2703 Features


  • Surface Mount

  • Advanced Process Technology

  • Ultra Low On-Resistance

  • Dynamic dv/dt Rating

  • Fast Switching

  • Fully Avalanche Rated

  • Lead-Free



IRLL2703 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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