IRLL024ZPBF Description
The IRLL024ZPBF is a HEXFET? single N-channel Power MOSFET utilizing the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 150°C junction operating temperature, fast switching speed, and improved repetitive avalanche rating. These features combine to make this IRLL024ZPBF an extremely efficient and reliable device for use in a wide variety of applications
IRLL024ZPBF Features
Advanced Process Technology
Ultra-Low On-Resistance
150°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
IRLL024ZPBF Applications
