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IRLL024NTRPBF

IRLL024NTRPBF

IRLL024NTRPBF

Infineon Technologies

IRLL024NTRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRLL024NTRPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 3
Transistor Element Material SILICON
Manufacturer Package Identifier IRLL024NTRPBF
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 1999
Series HEXFET®
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Resistance 65mOhm
Additional FeatureAVALANCHE RATED, ULTRA LOW RESISTANCE
Voltage - Rated DC 55V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormGULL WING
Current Rating3.1A
JESD-30 Code R-PDSO-G4
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1W Ta
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation2.1W
Case Connection DRAIN
Turn On Delay Time7.4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 65m Ω @ 3.1A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 510pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3.1A Ta
Gate Charge (Qg) (Max) @ Vgs 15.6nC @ 5V
Rise Time21ns
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±16V
Fall Time (Typ) 25 ns
Turn-Off Delay Time 18 ns
Continuous Drain Current (ID) 3.1A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 55V
Dual Supply Voltage 55V
Recovery Time 58 ns
Max Junction Temperature (Tj) 150°C
Nominal Vgs 2 V
Height 1.8mm
Length 6.6802mm
Width 3.7mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Contains Lead, Lead Free
In-Stock:6659 items

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IRLL024NTRPBF Product Details

Description


A HEXFET? Power MOSFET is the IRLL024NTRPBF. Advanced processing techniques are used in Fifth Generation HEXFETs to obtain extraordinarily low on-resistance per silicon area. This benefit, when paired with the quick switching speed and ruggedized device architecture that HEXFET Power MOSFETs are known for, gives the designer an exceptionally efficient and dependable device that can be used in a wide range of applications.

The SOT-223 is a surface-mount package that may be soldered using vapor phase, infrared, or wave soldering processes. Its one-of-a-kind package design enables for effortless automatic pick-and-place, just like other SOT or SOIC packages, but with the extra benefit of increased thermal performance thanks to an expanded heat sinking tab. In a typical surface mount application, the power dissipation of 1.0W is attainable.



Features


● Ultra Low On-Resistance

● Dynamic dv/dt Rating

● Fully Avalanche Rated

● Fast Switching

● Surface Mount

● Advanced Process Technology

● Lead-Free



Applications


● In various radio and RF applications

● Transportation technology

● Automotive industry

● Power MOSFETs

● Consumer electronics


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