IRLI540N Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer
with a highly efficient and reliable device for use in various applications.
IRLI540N Features
Logic-Level Gate Drive
Advanced Process Technology
Isolated Package
High Voltage Isolation = 2.5KVRMS ?
Sink to Lead Creepage Dist. = 4.8mm
Fully Avalanche Rated