Name: IRLHS2242TR2PBF
Brand: Infineon Technologies
SKU: IRLHS2242TR2PBF
Availability: InStock

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IRLHS2242TR2PBF

Manufacturer part number:IRLHS2242TR2PBF

Manufacturer:Infineon Technologies

Description:IRLHS2242TR2PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRLHS2242TR2PBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-PowerVDFN
Number of Pins	6
Supplier Device Package	6-PQFN (2x2)
Packaging	Cut Tape (CT)
Published	2011
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	2.1W
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Element Configuration	Single
Power Dissipation	2.1W
Turn On Delay Time	7.9 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	31mOhm @ 8.5A, 4.5V
Vgs(th) (Max) @ Id	1.1V @ 10μA
Input Capacitance (Ciss) (Max) @ Vds	877pF @ 10V
Current - Continuous Drain (Id) @ 25°C	7.2A Ta 15A Tc
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Rise Time	54ns
Drain to Source Voltage (Vdss)	20V
Fall Time (Typ)	66 ns
Turn-Off Delay Time	54 ns
Continuous Drain Current (ID)	7.2A
Threshold Voltage	-800mV
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	-20V
Input Capacitance	870pF
Recovery Time	41 ns
Drain to Source Resistance	31mOhm
Rds On Max	31 mΩ
Nominal Vgs	-800 mV
Height	950μm
Length	2.1mm
Width	2.1mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free

IRLHS2242TR2PBF Product Details

IRLHS2242TR2PBF Description

IRLHS2242TR2PBF is a kind of power MOSFET that is designed based on advanced processing techniques for the purpose of making extremely low on-resistance per silicon area possible. Moreover, IRLHS2242TR2PBF is designed with the characteristics that HEXFET? power MOSFETs provide, including fast switching speed and ruggedized device design. All these make the device more efficient and reliable for battery and load management.