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IRL8113L

IRL8113L

IRL8113L

Infineon Technologies

MOSFET N-CH 30V 105A TO-262

SOT-23

IRL8113L Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2004
Series HEXFET®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation-Max 110W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6m Ω @ 21A, 10V
Vgs(th) (Max) @ Id 2.25V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2840pF @ 15V
Current - Continuous Drain (Id) @ 25°C 105A Tc
Gate Charge (Qg) (Max) @ Vgs 35nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
RoHS StatusNon-RoHS Compliant
In-Stock:1008 items

Pricing & Ordering

QuantityUnit PriceExt. Price
250$2.45216$613.04

About IRL8113L

The IRL8113L from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 30V 105A TO-262.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IRL8113L, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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