IRL2910SPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRL2910SPBF Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2003
Series
HEXFET®
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
3.8W Ta 200W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
26m Ω @ 29A, 10V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
3700pF @ 25V
Current - Continuous Drain (Id) @ 25°C
55A Tc
Gate Charge (Qg) (Max) @ Vgs
140nC @ 5V
Drain to Source Voltage (Vdss)
100V
Drive Voltage (Max Rds On,Min Rds On)
4V 10V
Vgs (Max)
±16V
RoHS Status
ROHS3 Compliant
In-Stock:2639 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$5.933449
$5.933449
10
$5.597593
$55.97593
100
$5.280748
$528.0748
500
$4.981838
$2490.919
1000
$4.699847
$4699.847
IRL2910SPBF Product Details
STP60N55F3 Description
STP60N55F3 is a 55v N-channel STripFET? III Power MOSFET. This STripFET? III Power MOSFET STP60N55F3 technology is among the latest improvements, which have been specially tailored to minimize on-state resistance providing superior switching performances. The operating junction and storage temperature are between -55 and 175℃. The MOSFET STP60N55F3 is in the TO-220 package with 110W power dissipation.
STP60N55F3 Features
Standard threshold drive
100% avalanche tested
Drain-source voltage (VGS=0):55V
Gate-source voltage: ±20V
Drain current (continuous) at TC = 25°C: 80A
STP60N55F3 Applications
Rotary Switch
DIP Switch
Limit Switch
Reed Switch
Rocker Switch
Toggle Switch
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