Name: IRL2505L
Brand: Infineon Technologies
SKU: IRL2505L
Availability: InStock

Technical Specifications

Parameter Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package	TO-262
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	1998
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	3.8W Ta 200W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	8mOhm @ 54A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	104A Tc
Gate Charge (Qg) (Max) @ Vgs	130nC @ 5V
Drain to Source Voltage (Vdss)	55V
Drive Voltage (Max Rds On,Min Rds On)	4V 10V
Vgs (Max)	±16V
RoHS Status	Non-RoHS Compliant

IRL2505L Product Details

IRL2505L Description

IRL2505L is a 55V HEXFET? Power MOSFET manufactured by Infineon. The Fifth Generation HEXFET IRL2505L from International Rectifier utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.