Name: IRL1104
Brand: Infineon Technologies
SKU: IRL1104
Availability: InStock

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IRL1104

Manufacturer part number:IRL1104

Manufacturer:Infineon Technologies

Description:IRL1104 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRL1104 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-220-3
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	1999
Series	HEXFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	MATTE TIN OVER NICKEL
Additional Feature	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	167W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8m Ω @ 62A, 10V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3445pF @ 25V
Current - Continuous Drain (Id) @ 25°C	104A Tc
Gate Charge (Qg) (Max) @ Vgs	68nC @ 4.5V
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Drain Current-Max (Abs) (ID)	104A
Drain-source On Resistance-Max	0.008Ohm
Pulsed Drain Current-Max (IDM)	416A
DS Breakdown Voltage-Min	40V
Avalanche Energy Rating (Eas)	340 mJ
RoHS Status	Non-RoHS Compliant

IRL1104 Product Details

IRL1104 Description

Fifth Generation HEXFET? power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance

per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET? power MOSFETs are well known for, provides

the designer with an extremely efficient device for use in a wide variety of applications.