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IRGP4066D-EPBF

IRGP4066D-EPBF

IRGP4066D-EPBF

Infineon Technologies

IRGP4066D-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRGP4066D-EPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 26 Weeks
Contact PlatingTin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.500007g
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2004
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation454W
Number of Elements 1
Rise Time-Max 90ns
Element ConfigurationSingle
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time50 ns
Power - Max 454W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 200 ns
Collector Emitter Voltage (VCEO) 2.1V
Max Collector Current 140A
Reverse Recovery Time 155 ns
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage600V
Collector Emitter Saturation Voltage1.7V
Turn On Time120 ns
Test Condition 400V, 75A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 75A
Turn Off Time-Nom (toff) 310 ns
IGBT Type Trench
Gate Charge150nC
Current - Collector Pulsed (Icm) 225A
Td (on/off) @ 25°C 50ns/200ns
Switching Energy 2.47mJ (on), 2.16mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Fall Time-Max (tf) 80ns
Height 20.7mm
Length 15.87mm
Width 5.13mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:4053 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$11.38000$11.38
25$10.02440$250.61
100$8.83240$883.24
500$7.85702$3928.51

IRGP4066D-EPBF Product Details

IRGP4066D-EPBF Benefits

High Efficiency in a Wide Range of Applications

Suitable for a Wide Range of Switching Frequencies due to

Low VCE (ON) and Low Switching Losses

Rugged Transient Performance for Increased Reliability

Excellent Current Sharing in Parallel Operation



IRGP4066D-EPBF Features

Low VCE (ON) Trench IGBT Technology

Low Switching Losses

Maximum Junction Temperature 175 °C

5 μS short circuit SOA

Square RBSOA

100% of The Parts Tested for ILM

Positive VCE (ON) Temperature Coefficient

Tight Parameter Distribution

Lead Free Package


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