IRGIB6B60KDPBF

Name: IRGIB6B60KDPBF
Brand: Infineon Technologies
SKU: IRGIB6B60KDPBF
Availability: InStock

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Manufacturer part number:IRGIB6B60KDPBF

Manufacturer:Infineon Technologies

Description:IRGIB6B60KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRGIB6B60KDPBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Weight	2.299997g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2004
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	38W
Current Rating	13A
Number of Elements	1
Element Configuration	Single
Power Dissipation	38W
Case Connection	ISOLATED
Input Type	Standard
Transistor Application	MOTOR CONTROL
Rise Time	17ns
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.2V
Max Collector Current	11A
Reverse Recovery Time	70 ns
JEDEC-95 Code	TO-220AB
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.8V
Turn On Time	45 ns
Test Condition	400V, 5A, 100 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 5A
Turn Off Time-Nom (toff)	258 ns
IGBT Type	NPT
Gate Charge	18.2nC
Current - Collector Pulsed (Icm)	22A
Td (on/off) @ 25°C	25ns/215ns
Switching Energy	110μJ (on), 135μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.5V
Fall Time-Max (tf)	27ns
Height	16.002mm
Length	10.5918mm
Width	4.8006mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

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