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IRGC25B120UB

IRGC25B120UB

IRGC25B120UB

Infineon Technologies

IRGC25B120UB datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRGC25B120UB Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case Die
Surface MountYES
Transistor Element Material SILICON
JESD-609 Code e0
Part StatusLast Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Insulated Gate BIP Transistors
Terminal Position UPPER
Terminal FormNO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code O-XUUC-N
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 25A
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A
IGBT Type NPT
Gate-Emitter Thr Voltage-Max 6V
RoHS StatusROHS3 Compliant
In-Stock:4679 items

IRGC25B120UB Product Details

IRGC25B120UB Description


These devices, known as IGBTs, were developed using a cutting-edge, unique trench gate fieldstop construction. These parts are from the HB series, the most recent generation of IGBTs, which maximizes the efficiency of any frequency converter by providing the best conduction and switching loss trade-offs. A safer paralleling operation is also made possible by the exceptionally narrow parameter distribution and somewhat positive VCE(sat) temperature coefficient.



IRGC25B120UB Features


  • Controller and Intel VID code applications both frequently employ

  • ANALOG SWITCHING CONTROLLER IC



IRGC25B120UB Applications


Switching applications


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