IRG8P25N120KDPBF Description
IRG8P25N120KDPBF is a 1200V insulated gate bipolar transistor with an ultrafast soft recovery diode. Its Benchmark Low VCE(ON) provides high efficiency in motor drive applications. 10μs Short Circuit SOA increases the margin for the short circuit protection scheme. A positive VCE(ON) temperature coefficient offers excellent current sharing in parallel operation. The Operating and Storage Temperature Range is between -40 and 150℃. And the Transistor IRG8P25N120KDPBF is in the TO-247AC-3 package with 180W power dissipation.
IRG8P25N120KDPBF Features
Benchmark Low VcE(ON)
10μs Short Circuit SOA
Positive VCE(ON) Temperature Coefficient
Square RBSOA and high lLM. rating
Lead-Free, RoHS compliant
IRG8P25N120KDPBF Applications
Industrial Motor Drive
UPS
Solar Inverters
Welding
