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IRG7U50HF12A

IRG7U50HF12A

IRG7U50HF12A

Infineon Technologies

IRG7U50HF12A datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

IRG7U50HF12A Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case POWIR® 34 Module
Operating Temperature-40°C~150°C TJ
Published 2014
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation310W
Configuration Half Bridge
Power - Max 310W
Input Standard
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 100A
Current - Collector Cutoff (Max) 1mA
Collector Emitter Breakdown Voltage1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance6nF
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 50A
NTC ThermistorNo
Input Capacitance (Cies) @ Vce 6nF @ 25V
RoHS StatusRoHS Compliant
In-Stock:2935 items

IRG7U50HF12A Product Details

IRG7U50HF12A Description

IRG7U50HF12A transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRG7U50HF12A MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.

IRG7U50HF12A Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

IRG7U50HF12A Applications

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display


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