IRG7U150HF12B

IRG7U150HF12B Description

The IRG7U150HF12B is an IGBT Half-Bridge POWIR 62? Package. Insulated-gate bipolar transistor, or IGBT, is a type of power semiconductor die. The physical construction and packaging of multiple IGBT power semiconductor die into a single package is known as an IGBT power module.

IRG7U150HF12B Features

• VCES = 1200V

• IC = 150A at TC = 80°C

• VCE(ON) = 1.70V at IC = 150A

• POWIR 62? Package

• Lead Free

• Low VCE(ON) and Switching Losses

• 100% RBSOA Tested

IRG7U150HF12B Applications

• Welding and Cutting Machine

• Switched Mode Power Supply

• Induction Heating

• Industrial Motor Drive

• Uninterruptible Power Supply