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IRG7T50HF12A

IRG7T50HF12A

IRG7T50HF12A

Infineon Technologies

IRG7T50HF12A datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

IRG7T50HF12A Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case POWIR® 34 Module
Operating Temperature-40°C~150°C TJ
Published 2014
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation340W
Configuration Half Bridge
Power - Max 340W
Input Standard
Collector Emitter Voltage (VCEO) 2.2V
Max Collector Current 100A
Current - Collector Cutoff (Max) 1mA
Collector Emitter Breakdown Voltage1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance6.7nF
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 50A
NTC ThermistorNo
Input Capacitance (Cies) @ Vce 6.7nF @ 25V
RoHS StatusRoHS Compliant
In-Stock:3143 items

IRG7T50HF12A Product Details

IRG7T50HF12A Description


IRG7T50HF12A, a product sold by Utmel Electronics and made by Infineon. It falls within the category of electronic components, ICs. It is used in a variety of industries, including automotive hybrid, electric, and powertrain systems, business systems, personal devices, and home theater and entertainment.

And here are this part's primary specifications: MOD IGBT 1200V 50A POWIR 34. It is also environmentally friendly and RoHS compliant (lead free).



IRG7T50HF12A Features


  • Package/Case: POWIR? 34 Module

  • Device Package: POWIR? 34

  • RoHS: Lead free / RoHS Compliant



IRG7T50HF12A Applications


  • Automotive

  • Enterprise systems

  • Personal electronics


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