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IRG7T50FF12E

IRG7T50FF12E

IRG7T50FF12E

Infineon Technologies

IRG7T50FF12E datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

IRG7T50FF12E Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case POWIR ECO 2™ Module
Operating Temperature-40°C~150°C TJ
Published 2014
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation340W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Configuration Three Phase Inverter
Power - Max 340W
Input Standard
Collector Emitter Voltage (VCEO) 2.2V
Max Collector Current 100A
Current - Collector Cutoff (Max) 1mA
Collector Emitter Breakdown Voltage1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance6.7nF
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 50A
NTC ThermistorYes
Input Capacitance (Cies) @ Vce 6.7nF @ 25V
RoHS StatusRoHS Compliant
In-Stock:3505 items

IRG7T50FF12E Product Details

IRG7T50FF12E Description


The IRG7T50FF12E is an IGBT Six-Pack with POWIR ECO 2™ Package. IGBT, also known as an insulated-gate bipolar transistor, is a type of power semiconductor die. An IGBT power module is created by physically assembling and enclosing many IGBT power semiconductor dies.



IRG7T50FF12E Features


  • 10µsec Short Circuit Safe Operating Area

  • POWIR ECO 2™ Package

  • Lead Free

  • Low VCE(ON) and Switching Losses

  • 100% RBSOA Tested

  • VCES = 1200V

  • IC = 50A at TC = 80°C

  • tSC ≥ 10µsec

  • VCE(ON) = 1.90V at IC = 50A



IRG7T50FF12E Applications


  • Switched Mode Power Supply

  • Induction Heating

  • DC Inverter Drive

  • Industrial Motor Drive

  • Uninterruptible Power Supply

  • Welding and Cutting Machine


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