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IRG7T300HF12B

IRG7T300HF12B

IRG7T300HF12B

Infineon Technologies

IRG7T300HF12B datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

IRG7T300HF12B Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case POWIR® 62 Module
Operating Temperature-40°C~150°C TJ
Published 2014
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation1.6kW
Configuration Half Bridge
Power - Max 1600W
Input Standard
Collector Emitter Voltage (VCEO) 2.2V
Max Collector Current 570A
Current - Collector Cutoff (Max) 4mA
Collector Emitter Breakdown Voltage1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance42.4nF
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 300A
NTC ThermistorNo
Input Capacitance (Cies) @ Vce 42.4nF @ 25V
RoHS StatusRoHS Compliant
In-Stock:1959 items

IRG7T300HF12B Product Details

IRG7T300HF12B Description

IRG7T300HF12B transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRG7T300HF12B MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.

IRG7T300HF12B Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

IRG7T300HF12B Applications

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display


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