IRG7T200CL12B Description
IRG7T200CL12B transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRG7T200CL12B MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.
IRG7T200CL12B Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging
IRG7T200CL12B Applications
ISM applications
DC large signal applications
Power factor correction
Electronic lamp ballasts
Flat panel display
