IRG7T15FF12Z datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
SOT-23
IRG7T15FF12Z Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
EZIRPACK 1™ Module
Operating Temperature
-40°C~150°C TJ
Published
2014
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
210W
Configuration
Three Phase Inverter
Power - Max
210W
Input
Standard
Collector Emitter Voltage (VCEO)
2.2V
Max Collector Current
30A
Current - Collector Cutoff (Max)
1mA
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Input Capacitance
2nF
Vce(on) (Max) @ Vge, Ic
2.2V @ 15V, 15A
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
2nF @ 25V
RoHS Status
RoHS Compliant
In-Stock:4626 items
IRG7T15FF12Z Product Details
IRG7T15FF12Z Description
IRG7T15FF12Z is a single IGBT with a Voltage - Collector Emitter Breakdown (Max) of 1200V from Infineon Technologies. IRG7T15FF12Z operates between -40°C~150°C TJ, and its Max Collector Current is 30A. The IRG7T15FF12Z has 3 pins and it is available in Module packaging way. IRG7T15FF12Z has a 1200V Voltage - Collector Emitter Breakdown (Max) value.
IRG7T15FF12Z Features
Input Capacitance (Cies) @ Vce: 2nF @ 25V
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Voltage - Collector Emitter Breakdown (Max): 1200V
Collector Emitter Breakdown Voltage: 1.2kV
Max Collector Current: 30A
IRG7T15FF12Z Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
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