IRG5K75HF06A datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
SOT-23
IRG5K75HF06A Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
POWIR® 34 Module
Operating Temperature
-40°C~150°C TJ
Published
2014
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
330W
Configuration
Half Bridge
Power - Max
330W
Input
Standard
Collector Emitter Voltage (VCEO)
2.1V
Max Collector Current
140A
Current - Collector Cutoff (Max)
1mA
Collector Emitter Breakdown Voltage
600V
Input Capacitance
3.6nF
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 75A
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
3.6nF @ 25V
RoHS Status
RoHS Compliant
In-Stock:2248 items
IRG5K75HF06A Product Details
IRG5K75HF06A Description
IRG5K75HF06A is a single IGBT with a Voltage - Collector Emitter Breakdown (Max) of 600V from Infineon Technologies. IRG5K75HF06A operates between -40°C~150°C TJ, and its Max Collector Current is 140A. The IRG5K75HF06A has 3 pins and it is available in POWIR? 34 Module packaging way. IRG5K75HF06A has a 600V Voltage - Collector Emitter Breakdown (Max) value.
IRG5K75HF06A Features
Input Capacitance (Cies) @ Vce: 3.6nF @ 25V
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Collector Emitter Breakdown Voltage: 600V
Operating Temperature: -40°C~150°C TJ
Current - Collector Cutoff (Max): 1mA
IRG5K75HF06A Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
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