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IRG4RC10KDTRPBF

  • IRG4RC10KDTRPBF - IRG4RC10KDTRPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
  • IRG4RC10KDTRPBF - IRG4RC10KDTRPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

IRG4RC10KDTRPBF

IRG4RC10KDTRPBF

Infineon Technologies

IRG4RC10KDTRPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG4RC10KDTRPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 350.003213mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2004
JESD-609 Code e3
Part StatusLast Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional FeatureULTRA FAST SOFT RECOVERY
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation38W
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Base Part Number IRG4RC10KDPBF
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element ConfigurationSingle
Power Dissipation38W
Case Connection COLLECTOR
Input Type Standard
Transistor Application MOTOR CONTROL
Rise Time24ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.62V
Max Collector Current 9A
Reverse Recovery Time 28 ns
JEDEC-95 Code TO-252AA
Collector Emitter Breakdown Voltage600V
Collector Emitter Saturation Voltage2.39V
Max Breakdown Voltage 600V
Turn On Time78 ns
Test Condition 480V, 5A, 100 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.62V @ 15V, 5A
Turn Off Time-Nom (toff) 410 ns
Gate Charge19nC
Current - Collector Pulsed (Icm) 18A
Td (on/off) @ 25°C 49ns/97ns
Switching Energy 250μJ (on), 140μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Fall Time-Max (tf) 210ns
Height 1.2446mm
Length 6.7056mm
Width 6.223mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:4235 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.423152$0.423152
10$0.399200$3.992
100$0.376604$37.6604
500$0.355287$177.6435
1000$0.335176$335.176

IRG4RC10KDTRPBF Product Details

IRG4RC10KDTRPBF Description


TRANSISTOR WITH AN ULTRAFAST SOFT RECOVERY DIODE AND AN INSULATED GATE BIPOLAR



IRG4RC10KDTRPBF Features


  • Optimized for high operating frequencies >5.0 kHz, and short circuit rated to 10s @ 125°C, VGE = 15V

  • Compared to generation 3, the Generation 4 IGBT design offers tighter parameter dispersion and greater efficiency.

  • For usage in bridge arrangements, IGBT is co-packaged with HEXFREDTM ultrafast, ultrasoft-recovery anti-parallel diodes.

  • TO-252AA packaging, a common size.



IRG4RC10KDTRPBF Applications


Switching applications


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