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IRG4IBC30KDPBF

IRG4IBC30KDPBF

IRG4IBC30KDPBF

Infineon Technologies

IRG4IBC30KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG4IBC30KDPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2010
Part StatusLast Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional FeatureULTRA FAST SOFT RECOVERY
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation45W
Current Rating17A
Number of Elements 1
Element ConfigurationSingle
Power Dissipation45W
Case Connection ISOLATED
Input Type Standard
Turn On Delay Time60 ns
Transistor Application POWER CONTROL
Rise Time42ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 160 ns
Collector Emitter Voltage (VCEO) 2.7V
Max Collector Current 17A
Reverse Recovery Time 42 ns
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage600V
Collector Emitter Saturation Voltage2.7V
Turn On Time100 ns
Test Condition 480V, 16A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 16A
Turn Off Time-Nom (toff) 370 ns
Gate Charge67nC
Current - Collector Pulsed (Icm) 34A
Td (on/off) @ 25°C 60ns/160ns
Switching Energy 600μJ (on), 580μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 120ns
Height 16.129mm
Length 10.7442mm
Width 4.826mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:4462 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$4.189120$4.18912
10$3.952000$39.52
100$3.728302$372.8302
500$3.517266$1758.633
1000$3.318175$3318.175

IRG4IBC30KDPBF Product Details

IRG4IBC30KDPBF Description


IRG4IBC30KDPBF is a transistor that has been designed to handle more power than an industry-standard IGBT.


IRG4IBC30KDPBF Features

? High switching speed optimized for up to 25kHz with low Vgi(on)

? Short circuit Rat ing IHps @ I25°C, Vue. a I5V

? Gen arati on 4 IGBT desig n provides tighter parameter distribution and higher efficiency.

? IGBT co-packaged with HiXPRihTW ultrafast, ultra-soft-recovery and ti-parallel diodes for use in bridge configurations.


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