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IRG4BC40W-SPBF

IRG4BC40W-SPBF

IRG4BC40W-SPBF

Infineon Technologies

IRG4BC40W-SPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG4BC40W-SPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Mount Surface Mount, Through Hole
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2004
JESD-609 Code e3
Part StatusLast Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional FeatureLOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation160W
Terminal Position SINGLE
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating40A
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element ConfigurationDual
Power Dissipation160W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time27 ns
Transistor Application POWER CONTROL
Rise Time23ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 100 ns
Collector Emitter Voltage (VCEO) 2.5V
Max Collector Current 40A
Collector Emitter Breakdown Voltage600V
Collector Emitter Saturation Voltage2.05V
Turn On Time48 ns
Test Condition 480V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 20A
Turn Off Time-Nom (toff) 294 ns
Gate Charge98nC
Current - Collector Pulsed (Icm) 160A
Td (on/off) @ 25°C 27ns/100ns
Switching Energy 110μJ (on), 230μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 110ns
Height 4.83mm
Length 10.668mm
Width 4.826mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:2021 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$4.15000$4.15
50$3.52340$176.17
100$3.05360$305.36
500$2.59952$1299.76

IRG4BC40W-SPBF Product Details

IRG4BC40W-SPBF Description

IRG4BC40W-SPBF transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRG4BC40W-SPBF MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies IRG4BC40W-SPBF has the common source configuration.

IRG4BC40W-SPBF Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

IRG4BC40W-SPBF Applications

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display


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