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IRG4BC30KDSTRLP

IRG4BC30KDSTRLP

IRG4BC30KDSTRLP

Infineon Technologies

IRG4BC30KDSTRLP datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG4BC30KDSTRLP Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 260.39037mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2000
JESD-609 Code e3
Part StatusLast Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional FeatureLOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation100W
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Base Part Number IRG4BC30KD-SPBF
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element ConfigurationSingle
Case Connection COLLECTOR
Input Type Standard
Power - Max 100W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.7V
Max Collector Current 28A
Reverse Recovery Time 42 ns
Collector Emitter Breakdown Voltage600V
Max Breakdown Voltage 600V
Turn On Time100 ns
Test Condition 480V, 16A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 16A
Turn Off Time-Nom (toff) 370 ns
Gate Charge67nC
Current - Collector Pulsed (Icm) 56A
Td (on/off) @ 25°C 60ns/160ns
Switching Energy 600μJ (on), 580μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 120ns
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:3627 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.809205$1.809205
10$1.706797$17.06797
100$1.610186$161.0186
500$1.519043$759.5215
1000$1.433060$1433.06

IRG4BC30KDSTRLP Product Details

IRG4BC30KDSTRLP Description


BIPOLAR TRANSISTOR WITH INSULATED GATE AND ULTRAFAST SOFT RECOVERY DIODE



IRG4BC30KDSTRLP Features


?Combining high switching speed and reduced conduction losses


? tighter parameter distribution and greater efficiency compared to earlier generations


?HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes are packaged with IGBT.


?Lead-Free



IRG4BC30KDSTRLP Applications


Switching applications


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