IRFZ48NSPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRFZ48NSPBF Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
22 Weeks
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2001
Series
HEXFET®
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
3.8W Ta 130W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
14m Ω @ 32A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1970pF @ 25V
Current - Continuous Drain (Id) @ 25°C
64A Tc
Gate Charge (Qg) (Max) @ Vgs
81nC @ 10V
Drain to Source Voltage (Vdss)
55V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
RoHS Status
ROHS3 Compliant
In-Stock:3272 items
IRFZ48NSPBF Product Details
IRFZ48NSPBF Description
The IRFZ48NSPBF is a HEXFET? single N-channel Power MOSFET utilizing advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design provides an extremely efficient and reliable operation. The Infineon IRFZ48NSPBF is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
IRFZ48NSPBF Features
Advanced Process Technology
Surface Mount (IRFZ48NS)
Low-profile through-hole (IRFZ48NL)
175??C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-free
IRFZ48NSPBF Applications
Induction furnaces
Arc furnaces and arc welders
Steel rolling mills
Large motors with periodic loading
Thyristor drives
Related Products
Similar Transistors - FETs, MOSFETs - Single from Infineon Technologies and other manufacturers
