IRFZ44NL Description
International Rectifier's Advanced HEXFET? Power MOSFETs use advanced processing techniques to achieve extraordinarily low on-resistance per silicon area. This benefit, when paired with the high switching speed and ruggedized device architecture that HEXFET power MOSFETs are known for, gives the designer an exceptionally efficient and dependable device that can be used in a wide range of applications. The is a surface mount power package that can handle die sizes up to HEX-4. It has the highest power capabilities and the lowest on-resistance of any surface mount package currently available. Because of its low internal connection resistance, the D2Pak is appropriate for high current applications and can dissipate in a conventional surface mount application. For low-profile applications, the through-hole variant (IRFZ44NL) is offered.
IRFZ44NL Features
Drain to Source Voltage (Vdss): 55V
Drain-source On Resistance-Max: 0.0175Ohm
DS Breakdown Voltage-Min: 55V
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
IRFZ44NL Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
