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IRFSL7437PBF

IRFSL7437PBF

IRFSL7437PBF

Infineon Technologies

N-Channel Tube 1.8m Ω @ 100A, 10V ±20V 7330pF @ 25V 225nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA

SOT-23

IRFSL7437PBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Series HEXFET®, StrongIRFET™
Published 2012
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 1.8MOhm
Terminal Position SINGLE
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 230W Tc
Operating ModeENHANCEMENT MODE
Power Dissipation230W
Case Connection DRAIN
Turn On Delay Time19 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.8m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 3.9V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 7330pF @ 25V
Current - Continuous Drain (Id) @ 25°C 195A Tc
Gate Charge (Qg) (Max) @ Vgs 225nC @ 10V
Rise Time70ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 53 ns
Turn-Off Delay Time 78 ns
Continuous Drain Current (ID) 195A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Avalanche Energy Rating (Eas) 802 mJ
Nominal Vgs 3 V
REACH SVHC No SVHC
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:3600 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$2.19000$2.19
10$1.97900$19.79
100$1.59020$159.02
500$1.23682$618.41

IRFSL7437PBF Product Details

IRFSL7437PBF Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 802 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 7330pF @ 25V.This device has a continuous drain current (ID) of [195A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=40V, the drain-source breakdown voltage is 40V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 78 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 19 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 3V.Its overall power consumption can be reduced by using drive voltage (6V 10V).

IRFSL7437PBF Features


the avalanche energy rating (Eas) is 802 mJ
a continuous drain current (ID) of 195A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 78 ns
a threshold voltage of 3V


IRFSL7437PBF Applications


There are a lot of Infineon Technologies
IRFSL7437PBF applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit

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