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IRFSL38N20DPBF

IRFSL38N20DPBF

IRFSL38N20DPBF

Infineon Technologies

INFINEON IRFSL38N20DPBF MOSFET Transistor, N Channel, 43 A, 200 V, 0.054 ohm, 10 V, 5 VNew

SOT-23

IRFSL38N20DPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
PackagingTube
Published 2004
Series HEXFET®
JESD-609 Code e3
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Max Operating Temperature175°C
Min Operating Temperature -55°C
Subcategory FET General Purpose Power
Max Power Dissipation300W
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating ModeENHANCEMENT MODE
Power Dissipation3.8W
Case Connection DRAIN
Turn On Delay Time16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 54m Ω @ 26A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2900pF @ 25V
Current - Continuous Drain (Id) @ 25°C 43A Tc
Gate Charge (Qg) (Max) @ Vgs 91nC @ 10V
Rise Time95ns
Drain to Source Voltage (Vdss) 200V
Fall Time (Typ) 47 ns
Turn-Off Delay Time 29 ns
Continuous Drain Current (ID) 44A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.054Ohm
DS Breakdown Voltage-Min 200V
Avalanche Energy Rating (Eas) 460 mJ
Height 9.65mm
Length 10.67mm
Width 4.826mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
In-Stock:2953 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$4.334621$4.334621
10$4.089265$40.89265
100$3.857797$385.7797
500$3.639432$1819.716
1000$3.433426$3433.426

About IRFSL38N20DPBF

The IRFSL38N20DPBF from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features INFINEON IRFSL38N20DPBF MOSFET Transistor, N Channel, 43 A, 200 V, 0.054 ohm, 10 V, 5 VNew.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IRFSL38N20DPBF, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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