Name: IRFS7437PBF
Brand: Infineon Technologies
SKU: IRFS7437PBF
Availability: InStock

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IRFS7437PBF

Manufacturer part number:IRFS7437PBF

Manufacturer:Infineon Technologies

Description:IRFS7437PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRFS7437PBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2007
Series	HEXFET®, StrongIRFET™
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	230W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	230W
Case Connection	DRAIN
Turn On Delay Time	19 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.8m Ω @ 100A, 10V
Vgs(th) (Max) @ Id	3.9V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds	7330pF @ 25V
Current - Continuous Drain (Id) @ 25°C	195A Tc
Gate Charge (Qg) (Max) @ Vgs	225nC @ 10V
Rise Time	70ns
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	53 ns
Turn-Off Delay Time	78 ns
Continuous Drain Current (ID)	195A
Threshold Voltage	3V
Gate to Source Voltage (Vgs)	20V
DS Breakdown Voltage-Min	40V
Avalanche Energy Rating (Eas)	802 mJ
Recovery Time	30 ns
Nominal Vgs	3 V
Height	4.83mm
Length	10.67mm
Width	9.65mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

IRFS7437PBF Product Details

IRFS7437PBF Description

IRFS7437PBF is a kind of HEXFET? power MOSFET developed by Infineon Technologies. This electronic device features an improved gate, avalanche, and dynamic dV/dt ruggedness, fully characterized capacitance and avalanche SOA, as well as enhanced body diode dV/dt and dI/dt capability. Based on its specific characteristics, it is well suited for a wide range of applications, including battery-powered circuits, synchronous rectifier applications, DC/DC and AC/DC converters, and more.