Welcome to Hotenda.com Online Store!

logo
userjoin
Home

IRFS4410ZPBF

IRFS4410ZPBF

IRFS4410ZPBF

Infineon Technologies

IRFS4410ZPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRFS4410ZPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2008
Series HEXFET®
JESD-609 Code e3
Part StatusDiscontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Termination SMD/SMT
ECCN Code EAR99
Resistance 9MOhm
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Power Dissipation-Max 230W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation230W
Case Connection DRAIN
Turn On Delay Time16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9m Ω @ 58A, 10V
Vgs(th) (Max) @ Id 4V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 4820pF @ 50V
Current - Continuous Drain (Id) @ 25°C 97A Tc
Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V
Rise Time52ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 57 ns
Turn-Off Delay Time 43 ns
Continuous Drain Current (ID) 97A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Dual Supply Voltage 100V
Avalanche Energy Rating (Eas) 242 mJ
Recovery Time 57 ns
Nominal Vgs 4 V
Height 4.826mm
Length 10.668mm
Width 9.65mm
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:2265 items

IRFS4410ZPBF Product Details

IRFS4410ZPBF Description


IRFS4410ZPBFcan improve Gate, Avalanche and Dynamic dV/dt Ruggedness.The device is fully characterized capacitance and avalanche SOA and enhanced body diode dV/dt and dI/dt Capability.It is Lead-Free and RoHS Compliant, Halogen-Free.


IRFS4410ZPBF Applications


High Efficiency Synchronous Rectification in SMPS

Uninterruptible Power Supply

High Speed Power Switching

Hard Switched and High Frequency Circuits

IRFS4410ZPBF Features


Improved Gate, Avalanche and Dynamic dV/dtRuggedness

Fully Characterized Capacitance and AvalancheSOA

Enhanced body diode dV/dt and dI/dt CapabilityLead-Free

RoHS Compliant, Halogen-Free


Get Subscriber

Enter Your Email Address, Get the Latest News