Name: IRFS4310PBF
Brand: Infineon Technologies
SKU: IRFS4310PBF
Availability: InStock

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IRFS4310PBF

Manufacturer part number:IRFS4310PBF

Manufacturer:Infineon Technologies

Description:IRFS4310PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRFS4310PBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2006
Series	HEXFET®
JESD-609 Code	e3
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	300W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	7m Ω @ 75A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	7670pF @ 50V
Current - Continuous Drain (Id) @ 25°C	130A Tc
Gate Charge (Qg) (Max) @ Vgs	250nC @ 10V
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	75A
Drain-source On Resistance-Max	0.007Ohm
Pulsed Drain Current-Max (IDM)	550A
DS Breakdown Voltage-Min	100V
Avalanche Energy Rating (Eas)	980 mJ
RoHS Status	ROHS3 Compliant

IRFS4310PBF Product Details

IRFS4310PBF Description

IRFS4310PBF is a 100v HEXFET? Power MOSFET. The Infineon IRFS4310PBF can be applied in High-Efficiency Synchronous Rectification in SMPS, Uninterruptible Power Supply, High-Speed Power Switching, and Hard Switched and High-Frequency Circuits. The Operating and Storage Temperature Range is between -55 and 175℃. And the MOSFET IRFS4310PBF is in the TO-252-3 package with 330W power dissipation.