Name: IRFS3107PBF
Brand: Infineon Technologies
SKU: IRFS3107PBF
Availability: InStock

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IRFS3107PBF

Manufacturer part number:IRFS3107PBF

Manufacturer:Infineon Technologies

Description:IRFS3107PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRFS3107PBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2008
Series	HEXFET®
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Termination	SMD/SMT
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	370W Tc
Element Configuration	Single
Power Dissipation	370W
Turn On Delay Time	19 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	3m Ω @ 140A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	9370pF @ 50V
Current - Continuous Drain (Id) @ 25°C	195A Tc
Gate Charge (Qg) (Max) @ Vgs	240nC @ 10V
Rise Time	110ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	100 ns
Turn-Off Delay Time	99 ns
Reverse Recovery Time	54 ns
Continuous Drain Current (ID)	230A
Threshold Voltage	2.35V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	75V
Dual Supply Voltage	75V
Nominal Vgs	2.35 V
Height	4.826mm
Length	10.668mm
Width	9.65mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

IRFS3107PBF Product Details

IRFS3107PBF Description

In 1977, Alex Lidow and Tom Herman co-invented HexFET, a hexagonal power MOSFET, at Stanford University. HexFET was commercialized by the International Rectifier in 1978.